CLAUDE DELALANDE

Page personnelle de Claude DELALANDE


adresse postale :

Laboratoire Pierre Aigrain
24, rue Lhomond
75230 Paris Cedex 05 - France

Bureau: pièce PL12 (extension)
Téléphone: +33 1 44 32 33 68
Fax: +33 1 44 32 38 40

 


PUBLICATIONS

 

  1. C. Delalande and A. Mysyrowicz, Laser induced two-photon decay in Pr3+ : La A103 Opt. Comm. 7, 10 (1973)
  2. G.M. Gale, C. Delalande and J. Ducuing, Vibrational relaxation of H2 liquid, Opt. Comm. 18, 192 (1976)
  3. C. Delalande and G.M. Gale, Low temperature vibrational relaxation of nH2 gas, liquid and solid, Chem Phys. Lett. 50, 339 (1977)
  4. G.M. Gale and C. Delalande, Vibrational energy transfer in hydrogen liquid and its isotopes, Chem. Phys. 34, 205 (1978)
  5. M. Château, C. Delalande, R. Frey, G.M. Gale and F. Pradère, Vibrational population relaxation of compressed nH2 fluid in the 15-110 K range
  6. C. Delalande and G.M. Gale, A semi-classical model for vibrational energy relaxation in simple liquids and compressed fluids, J. Chem. Phys., 71, 4804 (1979)
  7. C. Delalande, Relaxation de population vibrationnelle dans les liquides moléculaires simples ; expériences et modèle théorique, Thèse d'Etat, Université Paris XI (1979)**
  8. C. Delalande and G.M. Gale, Vibrational relaxation of compressed nD2 fluid , Chem. Phys. Lett. 71, 264 (1980)
  9. C. Delalande and G.M. Gale, Vibrational energy relaxation in fluid mixtures : hydrogen in Argon, J. Chem. Phys.73, 1918 (1980)
  10. Ph. Roussignol, C. D elalande and G.M. Gale, Vibrational relaxation of Deuterium in Argon fluid, Chem. Phys. 70, 319 (1982)
  11. M. Razeghi, J.P. Hirtz, U.O. Ziemelis, C. Delalande, B. Etiennne and M. Voos, Growth of Ga0.47 In0.53As-InP quantum wells by low pressure metalorganic chemical vapor deposition, Appl. Phys. Lett. 43, 585 (1983)
  12. G. Bastard, U.O. Ziemelis, C. Delalande, M. Voos, A.C. Gossard and W. Wiegmann, Bouund and virtual bound states in semiconductor quantum wells, Sol. State Comm. 49, 671 (1984)
  13. C. Delalande, U.O. Ziemelis, G. Bastard, M. Voos, A.C. Gossard and W. Wiegmann, Photoluminescence and excitation spectrosocopy in coupled GaAs-Ga(A1)As quantum wells, Surface Science, 142, 498 (1984)*
  14. G. Bastard, C. Delalande, M.H. Meynadier,P.M. Frijlink and M. Voos, Low temperature exciton trappling on interface defects in semiconductor quantum wells, Phys. Rev. B, 29, 7042 (1984)**
  15. P. Voisin, C. Delalande, M. Voos, LL. Channg, A. Segmuller, C.A. Chang and L. Esaki, Light and heavy valence subbands reversal in GaSb-A1Sb superlattices, Phys. Rev. B, 30, 2276 (1984)
  16. C. Delalande, M.H. Meynadier and M. Voos, Effect of temperature on exciton trapping on interface defects in GaAs quantum wells, Phys. Rev. B, 31, 2497 (1985)
  17. M.H. Meynadier, C. Delalande, G. Bastard, M. Voos, F. Alexandre, J.L. Lièvin, Size quantizaton aned band offset determination in GaAs-Ga(A1)As separate confinement heterostructures, Phys. Rev. B, 31 (1985)
  18. P. Voisin, C. Delalande, G. Bastard, M. Voos, L.L. Chang, A. Segmuller, C.A. Chang and L. Esaki, Electronic structures of GaSb-A1Sb superlattices, Superlattices and Microstructures, 1, 155 (1985)*
  19. C. Delalande, Optical properties of semiconductor quantum wells in heterojunctons and semiconductor superlattices dans "Heterojunctions and semiconductor superlattices" (G. Allan, G. Bastard, N. Boccara, M. Lanoo and M. Voos ed.) Springer Verlag (1986)**
  20. M.H. Meynadier, J.A. Brum, C. Delalande, M. Voos, F. Alexandre and J.L. Lièvin, Optical studies of impurity trapping at the Ga(A1)As-GaAs interface in quantum well structures, Journ. Of Appl. Phys., 58, 4307 (1985)
  21. C. Delalande, Optical investigatons of GaAs/Ga(A1)As interfaces in quantum wells, Surface Science, 168, 531 (1986)*
  22. F. Alexandre, J.L. Lièvin, M.H. Meynadier and C. Delalande, GaAs-Ga(A1) and Ga(A1)As-GaAs hetero-interfaces grown by molecular beam epitaxy, Surface Science 168, 454, (1986)
  23. C. Delalande and M. Voos, Optical processes in semi-conductor quantum wells, Surface Science, 174, 111 (1986)*
  24. M. Sauvage, C. Delalande, P. Voisin, B. Etienne and P. Delescluse, Evaluation of A11-xInxAs-GaAs strained layers superlattices by X-ray diffractrometry and excitation spectroscopy, Surface Science, 174, 573 (1986)*
  25. C. Delalande, Optical studies of shallow impurities in semiconductor quantum well structures, Physica B, 146, 112 (1986)*
  26. M.H. Meynadier, J. Orgonasi, C. Delalande, J.A. Brum, G. Bastard, M. Voos, G. Weimann and W. Schlapp, Spectroscopy of a high-mobility GaAs-Ga1-xAlxAs one side modulation-doped quantum well structures, Phys. Rev. B, 34, 2482 (1986)
  27. C. Delalande, J. Orgonasi, M.H. Meynadier, J.A. Brum, G. Bastard, G. Weimann and W. Schlapp, Band gap renormalizaton in a GaAs-Ga1-xAlxAs modulation-doped quantum well, Solid State Communic. 59, 613 (1986)
  28. J. Orgonasi, M.H. Meynadier, C. Delalande, G. Weimann and W. Schlapp, Measurement of the density dependence of the band gap renormalization in a n-type modulation-doped quantum well, Superlattices and Microstructures, 3, 25 (1987)*
  29. C. Delalande, J.A. Brum, J. Orgonasi, M.H. Meynadier, , G. Bastard, J.C. Mann, G. Weimann and W. Schlapp, Landau levels and magnetoluminescence of a n-type modulation-doped quantum wells, Superlattices and Microstructures, 3, 29 (1987)*
  30. G. Bastard, C. Delalande, Y. Guldner and P. Voisin, Optical characterization of III-V and II-VI semiconductor heterolayers, Advances in Electronics and Electron Physics, 72, 1180 (1988)**
  31. G. Bastard, C. Delalande, Role of interfaces in semiconductor heterostructures, dans "Semiconductor Interfaces : Formation and Properties", Le Lay, Derrien et Boccara editeurs, Springer Verlag (1987)**
  32. C. Delalande, Optical investigations of modulation-doped quantum wells, Physica Scripta, vol. T19, 129 (1987)*
  33. J. Orgonasi, J.A. Brum, C. Delalande, G. Bastard, M. Voos, T. Röters, J.C. Maan, G. Weimann and W. Schlapp, Magnetoluminescence of one-side modulaton-doped quantum wells, Journal de Physique, C5, 48 (1987) 407*
  34. J.A. Brum, J. Orgonasi, G. Bastard, C. Delalande, M. Voos, G. Weimann and W. Schlapp, Optical properties of one-side modulaton-doped quantum wells, Surface Science, 196, 545 (1988)*
  35. C. Delalande, J. Orgonasi, J.A. Brum, G. Bastard, M. Voos, G. Weimann and W. Schlapp, Optical studies of a GaAs-quantum well FET, Applied Physics Letters, 51, 1346 (1987)
  36. C. Delalande, G. Bastard, J. Orgonasi, H.W. Liu, M. Voos, G. Weimann and W. Schlapp,Many-body effects in a modulation-doped semiconductor quantum well, Phys. Rev. Letters, 59, 2690 (1987)
  37. D. Moroni, E. Dupont-Nivet, J.P. André, J.N. Patillon and C. Delalande, Optical studies of misfit strain effects in GaInP epitaxial layers on (001) GaAs substrates, Journ. Of Appl. Phys. 63, 5188 (1988)
  38. G. Bastard, C. Delalande, Y. Guldner and M. Voos, Mobilité des puits quantiques étroits, Revue Phys. Appl. 24, 79 (1989)*
  39. H.W. Liu, C. Delalande, G. Bastard, M. Voos, G. Peter, R. Fisher, E.O. Göbel, J.A. Brum, G. Weimann and W. Schlapp, Density dependence of radiative and non radiative rates in a gated GaAGaA1As modulation doped quantum well, Phys. Rev. B 39, 537 (1989)
  40. H.W. Liu, R. Ferreira, G. Bastard, C. Delalande, J.F. Palmier, B. Etienne, Optical evidence of assisted tunneling in a biased double quantum well structure, Appl. Phys. Lett. 54, 2082 (1989)
  41. G. Peter, R. Fisher, E.O. Göbel, H.W. Liu, C. Delalande, G. Bastard, M. Voos, J.A. Brum, G. Weimann and W. Schlapp, Density dependence of recombination rates in a gated GaAs-GaA1As modulation-doped quantum well (1990)
  42. H.W. Liu, R. Ferreira, G. Bastard, C. Delalande, J.F. Palmier and B. Etienne, Optical study of assisted tunnelling in biased double quantum well structures, Surf. Science, 228, 383 (1990)*
  43. R. Ferreira, H.W. Liu, C. Delalande, G. Bastard, J.F. Palmier and B. Etienne, Electron, hole and exciton tunnelling in a biased quantum well structure, Surf. Science, 229, 192 (1990)*
  44. C. Delalande, Assisted relaxation and vertical transport of electrons, holes and excitons in semiconductor heterostructures, Journ. Luminesc. 44, 265 (1989)
  45. R. Ferreira, , C. Delalande, H.W. Liu, G. Bastard, B. Etienne and J.F. Palmier, Resonances in the excitonic transfer in biased double quantum wells, Phys. Rev. B., 42, 9170 (1990)
  46. C. Delalande, Tunnel transfer of electrons, holes and excitons in biased heterostructures, Superlattices and Microstructures, 8, 7 (1990)*
  47. C. Delalande, Exciton, hole and electron tunnelling in double quantum well structures, dans "Resonant tunnneling in semiconductors, physics and applications" L.L. Chang, E.E. Mendez and C. Tajedor édit Plenum (1991)**
  48. J.N. Patillon, R. Gamonal, M. Iost, JP. André, B. Souucail, C. Delalande and M. Voos, Enhancement of intrinsic photoluminescence due to lateral confinement in InP/InGaAs quantum wires and dots, J. Appl. Phys. 68, 3789 (1990)
  49. J.N. Patillon, C. Delalande, C. Jay, JP André, R. Gamonal, M. Lost, B. Soucail, M. Voos, G.M. Martin, Fabrication and optical characterization of InGaAs/Inp quantum wires and dots, J.J.A.P. B-4-3, 107 (1990)
  50. J. .N. Patillon, C. Delalande, C. Jay, JP André, R. Gamonal, M. Iost, B. Soucail, M. Voos, G.M. Martin, Optical properties of as-etched and regrown Inp/InGaAs quantum wires and dots, Supperlattices and Microstructures, 8, 335 (1991)*
  51. J.N. Patillon, M. Iost, R. gamonal, J.P. André, B. Soucail, G.M. Martin, C. Delalande, Nanostructures fabrication of Inp/InGaAs quantum wires and boxes, Semiconductor Scienc. And Techn. (1991)
  52. J. N. Patillon, C. Jay, C. Delalande, M. Iost, JP André, H. LeCoz, M. Signles-Frehel, O. Vlaemink and B. Soucail, New dry etching method for the fabrication of InP/InGaAs quantum wires, Jap. Journ. Of Appl. Phys. 30, L252 (1990)
  53. E. Deleporte, J.M. Berroir, G. Bastard, C. Delalande, J.M. Hong and L.L. Chang, Magnetic field induced type 1/type 2 transition in a semimagnetic CdTe/CdMnTe, Phys. Rev. B, 42, 5891 (1990)
  54. E. Deleporte, J.M. Berroir, G. Bastard, C. Delalande, J.M. Hong and L.L. Chang, Type 1/Type 2 transition in a semimagnetic CdTe/CdMnTe supperlatice, Superlattices and Microstructures, 8, 171 (1990)*
  55. G. Peter, E. Deleporte, J.M. Berroir, G. Bastard, C. Delalande, B. Gil, J.M. Hong and L.L. Chang, Studies of exchange-induced properties of CdTe/CdMnTe supperlatices, Jour. of Luminescence (1991)
  56. G. Peter, E. Deleporte, J.M. Berroir, C. Delalande, J.M. Hong and L.L. Chang, Temperature effect on the magnetic field induced type 1-type 2 transition in a CdTe/CdMnTe superlattice, Phys. Rev. B, 44, 11302 (1991)
  57. P. Rolland, R. Ferreira, N. Roy, Ph. Roussignol, A. Vinattierri, L. Carraresi, J.F. Palmier, B. Etienne, B. Sermage, C. Delalande and G. Bastard, Time resolved dynamics of the excitonic transfer in double quatum well structures, Surface Science, 262, L55 (1992)*
  58. E. Deleporte, J.M. Berroir, C. Delalande, N. Magnea, H. Mariette, J. Allegre and J. Calatayud, Excitonic effects in separate confinement quantum well heterostructures CdTe/CdZnTe, Phys. Rev. B, 45, 6305 (1992)
  59. Ph. Roussignol, P. Rolland, R. Ferreira, G. Bastard, C. Delalande, L. Carraresi, M. Colocci, A. Vinattieri and B. Etienne, Time resolved spin polarization spectroscopy in GaAs/GaA1As quantum wells, Surface Science, 267, 360 (1992)*
  60. E. Deleporte, G. Peter, J.M. Berroir, C. Delalande, J.M. Hong and L.L. Chang, Temperature dependence of the magneto-optical properties of a CdTe/CdMnTe multiquantum well structure, Surface Science, 263, 570 (1992)*
  61. E. Deleporte, G. Peter, J.M. Berroir and C. Delalande, Optical investigations of CdTe/CdZnTe separate confinment heterostructures, Surface Science, 267, 137 (1992)*
  62. R. Ferreira, P. Rolland, Ph. Roussignol, C. Delalande, A. Vinattieri, L. Carraresi, M. Colocci, N. Roy, B. Sermage, J.F. Palmier and B. Etienne, Time resolved exciton transfer in GaAs/GaA1As double quantum-well structures, Phys. Rev. B, 45, 11782 (1992)
  63. Ph. Roussignol, P. Rolland, R. Ferreira, C. Delalande, G. Bastard, A. Vinatierri, J. Martinez-Pastor, L. Carraresi, M. Colocci, J. F Palmier and B. Etiennne, Slow hole spin relaxation in a n-doped quantum well structure, Phys. Rev. B 46, 15 (1992)
  64. Ph. Roussignol, C. Delalande, A. Vinattieri, L. Carraresi and M. Colocci, Dynamics of exciton relaxation in GaAs/A1GaAs quantum wells, Phys. Rev. B 45, 6965 (1992)
  65. C. Delalande, Exciton relaxation dynamics in GaAs/A1GaAs single quantum well heterostructures, dans Ultrafast Processes in Spectroscopy, ed. by A. Lauberau (1991)**
  66. M. Voos, Ph. Uzan, G. Bastard, C. Delalande and A. Halimaoui, Visible photoluminescence from porous silicon, a quantum confinement due to holes ? Appl. Phys. Lett., 61, 1213 (1992)
  67. R. Ferreira, Ph. Roussignol, P. Rolland, G. Bastard, C. Delalande, A. Vinattieri and G. Weimann, Electron spin-polarization in p-doped quantum wells, Journal de Physique IV C 5, 175 (1993)*.
  68. Ph. Roussignol, J. Martinez-Pastor, A. Vinattieri, E. Deleporte, C. Delalande, M. Colocci and B. Lunn, Optical study of vertical transport in CdTe-Cd0.82Mn0.18Te superlattices, Phys. Rev. B 48 11871 (1993)*.
  69. Ph. Roussignol, J. Martinez-Pastor, A. Vinattieri, C. Delalande, and B. Lunn, Time-resolved optical study of vertical transport in Cd0.82Mn0.18Te/CdTe superlattices, Solid State Electronics 37, 1121 (1994).
  70. Ph. Roussignol, R. Ferreira, C. Delalande, G. Bastard, A. Vinattieri, J. Martinez-Pastor, L.Carraresi, M. Colocci, J.F. Palmier and B. Etienne, Hole spin relaxation in an n-doped quantum well structure, Surface Science 305, 263 (1994)* .
  71. E. Deleporte, T. Lebihen, B. Ohnesorge, P. Roussignol, C. Delalande, S. Guha and H. Munekata, Magnetic tailoring of the nature of the fundamental optical transition in a ZnSe/(Zn,Mn)Se heterostructure, Phys. Rev. B50, 4514 (1994).
  72. E. Deleporte, T. Lebihen, B. Ohnesorge, P. Roussignol, C. Delalande, M. Zigone, G. Martinez, Steady state and time-resolved magneto-luminescence in ZnSe/(Zn,Mn)Se heterostructures, Superlattices and Microstructures Vol. 15, 75 (1994)*.
  73. T. Lebihen, A. Filoramo, E. Deleporte, Ph. Roussignol, C. Delalande, J. Martinez-Pastor, Transfer dynamics from an interface type-II heavy hole exciton to a type-I hight hole exciton in a ZnSe/(Zn,Mn)Se heterostructure, Il Nuovo Cimento 17D, 1493 (1995)*.
  74. J. Tignon, P. Voisin, C. Delalande, M. Voos, R. Houdré, U. Oesterle and R.P. Stanley, From Fermi's golden rule to the vacuum Rabi splitting : magneto-polaritons in a semiconductor optical micro-cavity, Phys. Rev. Lett. 74, 3967 (1995).
  75. J. Tignon, P. Voisin, J. Wainstain, C. Delalande, M. Voos, R. Houdré, U. Oesterle, R.P. Stanley, Microcavité de semiconducteurs sous champ magnétique: de la règle d'or de Fermi au splitting de Rabi, Ann. Phys. Fr. 20, 541 (1995)*.
  76. M. Voos, C. Delalande, M. Ben Dahan, J. Wainstain, A.N. Titkov and A. Halimaoui, Optical investigations of quantum confiment effects in porous silicon, Solid State Comm. 94, 651 (1995)*.
  77. J. Tignon, P. Voisin, J. Wainstain, C. Delalande, M. Voos, R. Houdré, U. Oesterle, R.P. Stanley, Semiconductor microcavity under magnetic field: from the weak coupling to the strong coupling regime, Solid State Electronics, 40, 497 (1996)*.
  78. J. Wainstain, C. Delalande, M. Voos, R. Houdré, R.P. Stanley, U. Oesterle, Photoluminescence intensity in a semiconductor microcavity, Solid State Communications 99, 317 (1996).
  79. J. Tignon, P. Voisin, C. Delalande, M. Voos, R. Houdré, U. Oesterle and R.P. Stanley, Puits Quantiques de semiconducteurs dans une microcavité Fabry-Pérot: de la règle d’or de Fermi au splitting de Rabi, Journal de Physique IV 20, 1829 (1996)*.
  80. C. Delalande, Semiconductor quantum wells, in Quantum Optics of Confined Systems, M. Ducloy and D. Bloch ed., NATO ASI serie, Klewer, p. 314 (1996)**.
  81. E. Deleporte, J. Martinez-Pastor, A. Filoramo, D. Batovski, Ph. Roussignol, C. Delalande, C. Morhain, E. Tournié, J.P. Faurie, Time-resolved photoluminescence and steady state optical investigations of a ZnCdSe/ZnSe quantum well, Nuovo Cimento 17D, 1435 (1996)*.
  82. J. Wainstain, G. Cassabois, Ph. Roussignol, C. Delalande, M. Voos, F. Tassone, R. Houdré, R.P. Stanley and U. Oesterle, Relaxation of microcavity polaritons. Superlattices and microstructures 22 p.3(1997)*.
  83. I . Abram, J. Bloch et C. Delalande, Couplage fort matière-rayonnement dans les microcavités de semiconducteurs. Images de la physique (1997)**.
  84. E. Deleporte, C. Guénaud, J. Martinez-Pastor, A. Filoramo, D. Batovski, Ph. Roussignol, C. Delalande, C. Morhain, E. Tournié, et J.P. Faurie, Exciton relaxation dynamics in (Zn,Cd)Se/Znse quantum wells. Phys. Stat. Sol. (a), 164, p. 217 (1997)*.
  85. J. Tignon, R. Ferreira, J. Wainstain, C. Delalande, P. Voisin, M. Voos, R. Houdré, U. Oesterle, et R.P. Stanley,Magnetopolaritons in a semiconductor quantum well microcavity. Phys. Rev B 56, p. 4068 (1997).
  86. J. Tignon, J. Wainstain, R. Ferreira, P. Voisin, C. Delalande, M. Voos, R. Houdré, R. Stanley, et U. Oersterle,Rabi splitting of excited magneto-excitons in a semiconductor microcavity: experiments and calculations. Proceedings 12th International Conference on high magnetic fields in the physics of semiconductors II, p. 659, vol.2 (G. Landwehr and W. Ossau Eds, World Scientific, (1997)*.
  87. T. Lebihen, A. Filoramo, E. Deleporte, J. Martinez-Pastor, Ph. Roussignol, C. Delalande, M. Zigone, et G. Martinez,Dynamics of bound excitons in a ZnSe/(Zn, Mn)Se quantum well heterostructure. Phys. Rev., B 55, p. 9915 (1997).
  88. T. Lebihen, E. Deleporte, et C. Delalande,Band-offset determination of the CdTe/(Cd,Mn)Te interface. Phys. Rev., B 55, p. 1724 (1997).
  89. J. Tignon, O. Heller, Ph. Roussignol, C. Delalande, G. Bastard, V. Thierry-Mieg, R. Planel, et J.F. Palmier,Excitonic photoluminescence in a shallow quantum well under electric field. Applied Physics Letters, 72, p. 1217 (1998).
  90. J. Wainstain, C. Delalande, M. Voos, J. Bloch, V. Thierry-Mieg, et R. Planel,Dynamics of Polaritons in a Semiconductor Multiquantum Well Microcavity. Phys. Rev. B 58, p. 7269 (1998).
  91. J. Wainstain, C. Delalande, M. Voos, J. Bloch, V. Thierry-Mieg, R. Planel, R. Houdré, R.P. Stanley, et U. Oesterle,Photoluminesence Efficiency of Semiconductor-Microcavity Polaritons far from Resonance. Solid State Communications, 106, p. 711 (1998).
  92. C. Guénaud, E. Deleporte, A. Filoramo, Ph. Lelong, C. Delalande, C. Morhain, E. Tournié, et J.P. Faurie,Band offset determination of the Zn1-xCdxSe/ZnSe interface. J. of Crystal Growth, 184/185, p. 839 (1998)*.
  93. G. Cassabois, A.L.C. Triques, D. Larousserie, C. Delalande, Ph. Roussignol, P. Senellart-Mardon, R.P. J. Bloch, et V. Thierry-Mieg, Stationnary coherence in semiconductor microcavities. Phys. Rev. B 59, p. 10429 (1999).
  94. C. Guénaud, E. Deleporte, A. Filoramo, Ph. Lelong, C. Delalande, C. Morhain, E. Tournié, et J.-P. Faurie, Study of the band alignment in (Zn,Cd)Se quantum wells by means of photoluminescence excitation spectroscopy. J. Appl. Phys 87, p. 1863 (2000).
  95. F. Bogani, M. Gurioli, A. Vinattieri, M. Colocci, G. Cassabois, P. Roussignol, et C. Delalande,Coherent emission pattern of a semiconductor microcavity. Physica Status Solidi (b) 221, p. 137 (2000)*.
  96. G. Cassabois, A.L.C. Triques, R. Ferreira, C. Delalande, R. Roussignol, et F. Bogani,Coherent response of a semiconductor microcavity in the strong coupling regime. Physica E, 7, p. 631 (2000)*.
  97. G. Cassabois, A.L.C Triques, C. Delalande, Ph. Roussignol, et F. Bogani, Coherent response of a semiconductor microcavity in the strong coupling regime. Phys. Stat. Sol. (a), 178, p. 385 (2000)*.
  98. G. Cassabois, A.L.C. Triques, F. Bogani, C. Delalande, Ph. Roussignol, et C. Piermarocchi,Polariton-acoustic phonon interaction in a semiconductor microcavity. Phys. Rev., B 61, p. 1696 (2000).
  99. G. Cassabois, A.L.C. Triques, C. Delalande, P. Roussignol, et F. Bogani,Interference effect in the coherent emission of a semiconductor microcavity. Phys. Rev. B 64, p. 045321 (2001)
  100. C. Kammerer, G. Cassabois, C. Voisin, C. Delalande, PH. Roussignol et J.M Gérard, Photoluminescence up-conversion in single self-assembled InAs/GaAs quantum dots, Phys. Rev. Lett. 87, 207401 (2001).
  101. C. Kammerer, G. Cassabois, C. Voisin, C. Delalande, Ph. Roussignol, A. Lemaitre et J.M Gérard, Efficient acoustic-phonon broadening in single self-assembled InAs/GaAs quantum dots, Phys. Rev. B65, 033313 (2002).
  102. G. Cassabois, C. Kammerer, R. Sopracase, C. Voisin, C. Delalande, Ph. Roussignol et J.M. Gérard, Disorder-induced and phonon broadening in AnAs/GaAs quantum dot samples. J. Appl. Phys. 91, 5489 (2002)
  103. C. Kammerer, G. Cassabois, C. Voisin, C. Delalande, Ph. Roussignol et J.M Gérard, Photoluminescence up-conversion of single InAs/GaAs quantum dots, Physica E 3, 105(2002) *.
  104. C. Kammerer, G. Cassabois, C. Voisin, C. Delalande, Ph. Roussignol et J.M Gérard, Anti Stokes photoluminescence in self-assembled InAs/GaAs quantum dots, Phys. Sat. Solidi(a) 190, 505 (2002)*.
  105. C. Kammerer, G. Cassabois, C. Voisin, C. Delalande, Ph. Roussignol et J.M Gérard, Anti-stokes photoluminescence and phonon broadening in self-assembled InAs/GaAs quantum dots, Inst. Phys. Conf. Ser. 170, 7, 507 (2002)**.
  106. A. Huynh, J. Tignon, Ph. Roussignol, C. Delalande, R. André, R. Romestain et D. Le Si Dang, Experimental determination of intrinsic non-linearities in semiconductor microcavities in the coherent regime. Physica status solidi (a) 190, 345 (2002).*.
  107. A. Huynh, J. Tignon, Ph. Roussignol, C. Delalande, R. André, R. Romestain et D. Le Si Dang, Coherent dynamics of microcavity polaritons in the non-linear regime., Physica E 13, 427 (2002)*.
  108. A. Huynh, J. Tignon, Ph. Roussignol, C. Delalande, R. André, R. Romestain et D. Le Si Dang, Experimental determination of intrinsic non-linearities in semiconductor microcavities. Phys. Rev. B66, 113301 (2002)
  109. C. Kammerer, G. Cassabois, C. Voisin, C. Delalande, Ph. Roussignol et J.M Gérard,décohérence in single semiconductor quantum dots : Line narrowing in single quantum dots : towards the control of environment effects, Phys. Rev.B66, 041306 (2002).
  110. C. Kammerer, G. Cassabois, C. Voisin, M. Perrin, C. Delalande, Ph. Roussignol et J.M. Gérard, Interferometric correlation spectroscopy in single quantum dots, à paraître dans Appl. Phys.Lett. 81 (2002).
  111. C. Kammerer, G. Cassabois, C. Voisin, C. Delalande, Ph. Roussignol et J.M. Gérard, Decoherence and environment effects in single InGaAs quantum dots, à paraître dans Physica E*.
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